Far Infrared Studies of Silicon using Terahertz Spectroscopy
نویسندگان
چکیده
In this work, the optical properties of ptype silicon wafers, of various thicknesses, have been studied in the frequency range of 0.2 – 1.2 THz. It is seen that, for low resistivity silicon, the optical properties are dominated by the presence of dopants. The analysis technique deployed in the present work explores a general iterative procedure to determine the real and imaginary parts of the complex dielectric constant without utilizing Kramers-Kronig relationships. This study not only holds scientific relevance in material science but also opens up rich avenues for novel applications of terahertz spectroscopy to semiconductors.
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